Relaxation mechanisms in strained nanoislands.
نویسنده
چکیده
The new mechanism for relaxation of misfit stresses in nanoislands (quantum dots) is suggested and theoretically examined which is the formation of partial misfit dislocations. The parameters of nanoislands are estimated at which the generation of partial misfit dislocations is energetically favorable, with emphasis on the case of Ge/Si nanoislands. Different dislocation structures are shown to be energetically preferred in different regions of the interface.
منابع مشابه
Equilibrium shape and size of supported heteroepitaxial nanoislands
We study the equilibrium shape, shape transitions and optimal size of strained heteroepitaxial nanoislands with a two-dimensional atomistic model using simply adjustable interatomic pair potentials. We map out the global phase diagram as a function of substrate-adsorbate misfit and interaction. This phase diagram reveals all the phases corresponding to different well-known growth modes. In part...
متن کاملMechanisms of Dislocation Nucleation in Strained Epitaxial Layers
Using molecular static simulations we have studied possible mechanisms of stress relaxation with misfit dislocation nucleation in strained heteroepitaxial layers. Two-dimensional models of atomic systems with Lennard-Jones type potential were considered. Combination of total energy minimization with spherical repulsion and nudged elastic band calculation allowed us to study possible transitions...
متن کاملAcoustic phonon and surface roughness spin relaxation mechanisms in strained ultra-scaled silicon films
We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentu...
متن کاملRecombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term photoconductivity decay in Ge/Si heterostructures with Ge nanoislands have been found as caused by variations of the electrostatic potential in the near-surface region of Si(100) su...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 88 4 شماره
صفحات -
تاریخ انتشار 2002